SOIC-14
SN74CBTLV3125DR
The SN74CBTLV3125 quadruple FET bus switch features independent line switches. Each switch is disabled when the associated output-enable (OE\) input is high. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
品牌
TI
封装
SOIC-14
库存
1,638
货期
现货
SN74CBTLV3125DR参数
| 封装 | SOIC-14 |
|---|---|
| 品牌 | TI(德州仪器) |
| 批次 | 22+ |
| 电源极性 | 单电源 |
| 工作温度 | -40℃~85℃ |
| 静态电流(Iq) | 10uA |
| 分类 | 信号开关/编解码器/多路复用器 |
|---|---|
| 库存 | 1,638 |
| MOQ / SPQ | 1 / 1 |
| 工作电压 | 2.3V~3.6V |
| 传播延迟(tpd) | 0.25ns@3.3V, 50pF |
| 功能特性 | 断电保护； 输出使能高阻 |
SN74CBTLV3125DR概述
The SN74CBTLV3125 quadruple FET bus switch features independent line switches. Each switch is disabled when the associated output-enable (OE\) input is high. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\ should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
SN74CBTLV3125DR特性
暂无产品特性。
SN74CBTLV3125DR应用领域
暂无应用领域。