SOIC-8
SN74CBTD3306CDR
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. This device features an integrated diode in series with V; to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the
品牌
TI
封装
SOIC-8
库存
2,644
货期
现货
SN74CBTD3306CDR参数
| 封装 | SOIC-8 |
|---|---|
| 品牌 | TI(德州仪器) |
| 批次 | 22+ |
| 电源极性 | 单电源 |
| 输入数/输出数 | 2/2 |
| 传播延迟(tpd) | 0.15ns@5V, 5pF |
| 功能特性 | 断电保护; 电平转换; 输出使能高阻 |
| 分类 | 信号开关/编解码器/多路复用器 |
|---|---|
| 库存 | 2,644 |
| MOQ / SPQ | 1 / 1 |
| 工作电压 | 4.5V~5.5V |
| 工作温度 | -40℃~+85℃ |
| 静态电流(Iq) | 1.5mA |
SN74CBTD3306CDR概述
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. This device features an integrated diode in series with V; to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the
SN74CBTD3306CDR特性
暂无产品特性。
SN74CBTD3306CDR应用领域
暂无应用领域。
