IMBF170R450M1XTMA1
自营可供
IC
TO-263-7
IMBF170R450M1XTMA1
CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
品牌
Infineon
封装
TO-263-7
交期
现货
批次
23+
IMBF170R450M1XTMA1参数
| 封装 | TO-263-7 |
|---|---|
| 品牌 | Infineon(英飞凌) |
| 批次 | 23+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.7kV |
| 阈值电压(Vgs(th)) | 5.7V |
| 输入电容(Ciss) | 610pF |
| 工作温度 | -55℃~+175℃ |
| 导通电阻(RDS(on)) | 450mΩ |
| 分类 | 碳化硅场效应管(MOSFET) |
|---|---|
| 库存 | 10 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 107W |
| 栅极电荷量(Qg) | 11nC |
| 反向传输电容(Crss) | 1.7pF |
| 输出电容(Coss) | 16pF |
IMBF170R450M1XTMA1概述
CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.