TO-220-2
IDH20G120C5XKSA1
The CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost
品牌
Infineon
封装
TO-220-2
库存
1,058
货期
现货
IDH20G120C5XKSA1参数
| 封装 | TO-220-2 |
|---|---|
| 品牌 | Infineon(英飞凌) |
| 批次 | 24+ |
| 二极管类型 | 碳化硅肖特基 |
| 电流 - 平均整流 (Io) | 56A（DC） |
| 速度 | 无恢复时间 > 500mA（Io） |
| 不同 Vr 时电流 - 反向泄漏 | 123µA @ 1200V |
| 安装类型 | 通孔 |
| 工作温度 - 结 | -55°C ~ 175°C |
| 分类 | 碳化硅二极管 |
|---|---|
| 库存 | 1,058 |
| MOQ / SPQ | 1 / 1 |
| 电压 - DC 反向 (Vr)（最大值） | 1200V |
| 不同 If 时电压 - 正向 (Vf) | 1.8V @ 20A |
| 反向恢复时间 (trr) | 0ns |
| 不同 Vr、F 时电容 | 1050pF @ 1V， 1MHz |
| 封装/外壳 | TO-220-2 |
IDH20G120C5XKSA1概述
The CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost
IDH20G120C5XKSA1特性
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IDH20G120C5XKSA1应用领域
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