Power器件Semiconductor Digest
Infineon Processes Functional Power Devices on 300mm SiC Wafers
发布方: Semiconductor Digest发布时间: 2026年11月10日 01:04
资讯摘要
Infineon Technologies AG has successfully processed 300mm silicon carbide wafers into functional power devices at its fab in Villach, Austria. The post Infineon Processes Functional Power Devices on 300mm SiC Wafers appeared first on Semiconductor Digest .
Power器件制造半导体
资讯摘要仅供参考，完整内容及相关版权请以发布方原文为准。
查看原文