STGD6M65DF2
IC
DPAK
AvailableNegotiable
STGD6M65DF2
STGD6M65DF2 is a ST IGBTDevices/Modules in DPAK package.
Brand
ST
Package
DPAK
Stock
2,459
Lead Time
In stock
STGD6M65DF2 Parameters
| Package | DPAK |
|---|---|
| Brand | ST |
| Date Code | 22+ |
| IGBT类型 | FS(场截止) |
| 集射极击穿电压(Vces) | 650V |
| 集射极饱和电压(VCE(sat)) | 2V@6A, 15V |
| 栅极电荷量(Qg) | 21.2nC |
| 反向传输电容(Cres) | 11pF |
| 关断延迟时间(Td(off)) | 90ns |
| 关断损耗(Eoff) | 200uJ |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Category | IGBTDevices/Modules |
|---|---|
| Stock | 2,459 |
| MOQ / SPQ | 1 / 1 |
| 耗散功率(Pd) | 88W |
| 集电极电流(Ic) | 12A |
| 栅极阈值电压(Vge(th)) | 5V@250uA |
| OutputCapacitors(Coes) | 31pF |
| 开启延迟时间(Td(on)) | 15ns |
| 导通损耗(Eon) | 36uJ |
| 反向恢复时间(Trr) | 140ns |
STGD6M65DF2 Overview
IGBT-沟槽型场截止-650V-12A-88W-表面贴装型-DPAK
STGD6M65DF2 Features
No features are available.
STGD6M65DF2 Applications
No applications are available.