STGB30M65DF2
IC
D2PAK
AvailableNegotiable
STGB30M65DF2
STGB30M65DF2 is a ST IGBTDevices/Modules in D2PAK package.
Brand
ST
Package
D2PAK
Stock
819
Lead Time
In stock
STGB30M65DF2 Parameters
| Package | D2PAK |
|---|---|
| Brand | ST |
| Date Code | 24+ |
| IGBT类型 | FS(场截止) |
| 集射极击穿电压(Vces) | 650V |
| 集电极脉冲电流(Icm) | 120A |
| 集射极饱和电压(VCE(sat)) | 1.55V |
| 栅极电荷量(Qg) | 80nC@15V |
| OutputCapacitors(Coes) | 143pF |
| 开启延迟时间(Td(on)) | 31.6ns |
| 导通损耗(Eon) | 300uJ |
| 反向恢复时间(Trr) | 140ns |
| Category | IGBTDevices/Modules |
|---|---|
| Stock | 819 |
| MOQ / SPQ | 1 / 1 |
| 耗散功率(Pd) | 258W |
| 集电极电流(Ic) | 60A |
| 集电极截止电流(Ices) | 25uA |
| 栅极阈值电压(Vge(th)) | 6V |
| 输入电容(Cies) | 2.49nF |
| 反向传输电容(Cres) | 46pF |
| 关断延迟时间(Td(off)) | 115ns |
| 关断损耗(Eoff) | 960uJ |
| Operating Temperature | -55℃~+175℃@(Tj) |
STGB30M65DF2 Overview
IGBT-沟槽型场截止-650V-60A-258W-表面贴装型-D2PAK
STGB30M65DF2 Features
No features are available.
STGB30M65DF2 Applications
No applications are available.