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SN74CBTD3306CDR
Self-operatedAvailable
IC

SOIC-8

SN74CBTD3306CDR

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. This device features an integrated diode in series with V; to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the

Brand

TI

Package

SOIC-8

Lead Time

In stock

Date Code

22+

SN74CBTD3306CDR Parameters

PackageSOIC-8
BrandTI
Date Code22+
电源极性单电源
输入数/输出数2/2
传播延迟(tpd)0.15ns@5V, 5pF
功能特性断电保护; 电平转换; 输出使能高阻
Product NameA端口和B端口的关断隔离下冲保护可达-2V, 集成到Vcc的二极管提供5V输入降至3.3V输出电平转换。
PackagingTape & Reel
Product TypeSignalSwitches/Codecs/Multiplexers
CategorySignalSwitches/Codecs/Multiplexers
Stock2,275
MOQ / SPQ1 / 1
工作电压4.5V~5.5V
Operating Temperature-40℃~+85℃
静态电流(Iq)1.5mA
系列74CBTD
Part NumberSN74CBTD3306CDR
Unitpcs
Product Weight0.00033

SN74CBTD3306CDR Overview

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. This device features an integrated diode in series with V; to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using I; The I; feature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the

SN74CBTD3306CDR Features

  • A和B端口的欠压保护可达-2V
  • 集成到Vcc的二极管提供5V输入降至3.3V输出电平转换
  • 双向数据流, 传播延迟接近零
  • 低导通电阻-0.5 V到7 V
  • 开关I/O电压范围, VI/O-0.5 V到7 V
  • 控制输入箝位电流, IIK±128 mA
  • 通过Vcc或GND端子的连续电流±100 mA
  • 封装热阻, θJA:
  • D封装 97°C/W
  • PW封装 149°C/W
  • 存储温度范围, Tstg -65°C到150°C
  • Vcc电源电压 4.5 V到5.5 V
  • VIH高电平控制输入电压 2 V到5.5 V
  • VIL低电平控制输入电压 0 V到0.8 V
  • VI/O数据输入/输出电压 0 V到5.5 V
  • TA工作环境温度 -40°C到85°C
  • Cin控制输入 3.5 pF
  • Cio(OFF) 5 pF
  • Cio(ON) 12.5 pF
  • Ron 3 Ω 到 6 Ω(Vcc = 4.5 V, V = 0, I = 64 mA 到 30 mA)
  • tpd# 传播延迟 0.15 ns
  • ten 使能时间 1.5 ns 到 4.7 ns
  • tdis 禁用时间 1.5 ns 到 4.7 ns
  • VOUTU 2 V 到 VOH-0.3 V

SN74CBTD3306CDR Applications

  • USB 接口
  • 内存交错
  • 总线隔离
  • 低失真信号门控

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