SIA477EDJT-T1-GE3
Self-operatedAvailable
IC
PowerPAK-SC-70-6L
SIA477EDJT-T1-GE3
SIA477EDJT-T1-GE3 is a VISHAY MOSFETs(MOSFET) in PowerPAK-SC-70-6L package.
Brand
VISHAY
Package
PowerPAK-SC-70-6L
Lead Time
In stock
Date Code
—
SIA477EDJT-T1-GE3 Parameters
| Package | PowerPAK-SC-70-6L |
|---|---|
| Brand | VISHAY |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 12V |
| 耗散功率(Pd) | 3.5W |
| 栅极电荷量(Qg) | 33nC@4.5V |
| 反向传输电容(Crss) | 740pF |
| 类型 | P沟道 |
| 栅极电压(Vgs) | ±8V |
| Part Number | SIA477EDJT-T1-GE3 |
| Unit | pcs |
| Product Weight | 4.2857e-05 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 178 |
| 数量 | 1个P沟道 |
| 导通电阻(RDS(on)) | 13mΩ@4.5V |
| 阈值电压(Vgs(th)) | 400mV |
| 输入电容(Ciss) | 3.05nF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 725pF |
| Product Name | P沟道， 12 V（D-S）MOSFET |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
SIA477EDJT-T1-GE3 Overview
SIA477EDJT-T1-GE3 is a VISHAY MOSFETs(MOSFET) in PowerPAK-SC-70-6L package.
SIA477EDJT-T1-GE3 Features
- TrenchFET第三代P沟道功率MOSFET
- 热增强型PowerPAK SC-70封装
- 占用面积小
- 低导通电阻
- 100%进行栅极电阻(Rg)测试
- 在栅源电压(VGS)为 -1.8 V时的漏源导通电阻(RDS(on))额定值
- 内置齐纳二极管静电放电(ESD)保护
- 典型静电放电(ESD)性能:3500 V
SIA477EDJT-T1-GE3 Applications
- 智能手机、平板电脑、移动计算设备
- 电池开关
- 充电器开关
- 负载开关