SI8821EDB-T2-E1
IC
4-Microfoot
AvailableNegotiable
SI8821EDB-T2-E1
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
Brand
VISHAY
Package
4-Microfoot
Stock
30,000
Lead Time
In stock
SI8821EDB-T2-E1 Parameters
| Package | 4-Microfoot |
|---|---|
| Brand | VISHAY |
| Date Code | 26+ |
| 数量 | 1个P沟道 |
| 导通电阻(RDS(on)) | 135mΩ@4.5V |
| 阈值电压(Vgs(th)) | 600mV |
| 输入电容(Ciss) | 440pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 50pF |
| Product Name | 1个P沟道 耐压:30V 电流:1.6A |
| Package | XFBGA-4 |
| Unit | pcs |
| Product Weight | 4.295e-05 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 30,000 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 500mW |
| 栅极电荷量(Qg) | 17nC@10V |
| 反向传输电容(Crss) | 40pF |
| 类型 | P沟道 |
| 栅极电压(Vgs) | ±12V |
| Part Number | SI8821EDB-T2-E1 |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
SI8821EDB-T2-E1 Overview
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
SI8821EDB-T2-E1 Features
- TrenchFET功率MOSFET
- 外形面积小, 仅0.8 mm x 0.8 mm
- 最大高度低至0.4 mm
- 典型ESD保护能力达1400 V HBM
SI8821EDB-T2-E1 Applications
- 负载开关和充电器开关-电池管理、电源管理-DC/DC转换器-适用于智能手机、平板电脑和移动计算设备