SI7852DP-T1-GE3
IC
PowerPAKSO-8
AvailableNegotiable
SI7852DP-T1-GE3
SI7852DP-T1-GE3 is a VISHAY MOSFETs(MOSFET) in PowerPAKSO-8 package.
Brand
VISHAY
Package
PowerPAKSO-8
Stock
357
Lead Time
In stock
SI7852DP-T1-GE3 Parameters
| Package | PowerPAKSO-8 |
|---|---|
| Brand | VISHAY |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 80V |
| 耗散功率(Pd) | 1.9W |
| 栅极电荷量(Qg) | 34nC@10V |
| 类型 | N沟道 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 357 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 16.5mΩ@10V |
| 阈值电压(Vgs(th)) | 2V |
| Operating Temperature | -55℃~+150℃ |
SI7852DP-T1-GE3 Overview
场效应管(MOSFET) 1.9W 80V 7.6A 1个N沟道
SI7852DP-T1-GE3 Features
No features are available.
SI7852DP-T1-GE3 Applications
No applications are available.