SI4482DY-T1-E3-VB
Self-operatedAvailable
IC
SO-8
SI4482DY-T1-E3-VB
SI4482DY-T1-E3-VB is a VBsemi MOSFETs(MOSFET) in SO-8 package.
Brand
VBsemi
Package
SO-8
Lead Time
In stock
Date Code
—
SI4482DY-T1-E3-VB Parameters
| Package | SO-8 |
|---|---|
| Brand | VBsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 100V |
| 耗散功率(Pd) | 14W |
| 栅极电荷量(Qg) | 28.5nC@10V |
| 反向传输电容(Crss) | 50pF |
| 类型 | N沟道 |
| Product Name | 1个N沟道 耐压:100V 电流:9A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 5 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 32mΩ@10V |
| 阈值电压(Vgs(th)) | 3V |
| 输入电容(Ciss) | 1.9nF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 150pF |
| Part Number | SI4482DY-T1-E3-VB |
| Unit | pcs |
| Product Weight | 0.00028 |
SI4482DY-T1-E3-VB Overview
SI4482DY-T1-E3-VB is a VBsemi MOSFETs(MOSFET) in SO-8 package.
SI4482DY-T1-E3-VB Features
- 符合IEC 61249-2-21定义的无卤要求
- 极低的栅漏电荷(Qgd), 降低开关损耗
- 100%进行栅极电阻(Rg)测试
- 100%进行雪崩测试
- 符合RoHS指令2002/95/EC
SI4482DY-T1-E3-VB Applications
- 初级侧开关
- N沟道MOSFET