SI3552DV-T1-GE3
IC
SOT-23-6
AvailableNegotiable
SI3552DV-T1-GE3
SI3552DV-T1-GE3 is a VBsemi MOSFETs(MOSFET) in SOT-23-6 package.
Brand
VBsemi
Package
SOT-23-6
Stock
687
Lead Time
In stock
SI3552DV-T1-GE3 Parameters
| Package | SOT-23-6 |
|---|---|
| Brand | VBsemi |
| Date Code | 23+ |
| 数量 | 1个N沟道+1个P沟道 |
| 导通电阻(RDS(on)) | 105mΩ@10V； 200mΩ@10V |
| 阈值电压(Vgs(th)) | 1V |
| Operating Temperature | -55℃~+150℃ |
| 栅极电压(Vgs) | ±20V |
| Part Number | SI3552DV-T1-GE3 |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 687 |
| MOQ / SPQ | 5 / 1 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 730mW |
| 栅极电荷量(Qg) | 2.1nC@10V |
| 类型 | N沟道+P沟道 |
| Product Name | 1个N沟道+1个P沟道 耐压:30V 电流:2.5A |
| Package | TSOP-6 |
| Unit | pcs |
| Product Weight | 5.1e-05 |
SI3552DV-T1-GE3 Overview
SI3552DV-T1-GE3 is a VBsemi MOSFETs(MOSFET) in SOT-23-6 package.
SI3552DV-T1-GE3 Features
- 沟槽式场效应晶体管(TrenchFET)功率MOSFET
- 100%进行栅极电阻(Rg)测试
- 符合RoHS标准
- 无卤
- 提供N沟道MOSFET
- 提供P沟道MOSFET
SI3552DV-T1-GE3 Applications
No applications are available.