SI2304BDS-T1-GE3
IC
SOT-23
AvailableNegotiable
SI2304BDS-T1-GE3
SI2304BDS-T1-GE3 is a HXY MOSFET MOSFETs(MOSFET) in SOT-23 package.
Brand
HXY MOSFET
Package
SOT-23
Stock
40
Lead Time
In stock
SI2304BDS-T1-GE3 Parameters
| Package | SOT-23 |
|---|---|
| Brand | HXY MOSFET |
| Date Code | 25+ |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 70mΩ@10V |
| 阈值电压(Vgs(th)) | 3V |
| 输入电容(Ciss) | 225pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 50pF |
| Product Name | 1个N沟道 耐压:30V 电流:3.2A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 40 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 690mW |
| 栅极电荷量(Qg) | 2.6nC@5V |
| 反向传输电容(Crss) | 28pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | SI2304BDS-T1-GE3 |
| Unit | pcs |
| Product Weight | 3.5e-05 |
SI2304BDS-T1-GE3 Overview
SI2304BDS-T1-GE3 is a HXY MOSFET MOSFETs(MOSFET) in SOT-23 package.
SI2304BDS-T1-GE3 Features
- 根据 IEC 61249-2-21 定义, 无卤
- TrenchFET 功率 MOSFET
- 100% 测试栅极电阻 (Rg)
- 符合 RoHS 指令 2002/95/EC
SI2304BDS-T1-GE3 Applications
No applications are available.