SCT20N120
IC
HiP-247
AvailableNegotiable
SCT20N120
SCT20N120 is a ST Silicon CarbideMOSFETs(MOSFET) in HiP-247 package.
Brand
ST
Package
HiP-247
Stock
470
Lead Time
In stock
SCT20N120 Parameters
| Package | HiP-247 |
|---|---|
| Brand | ST |
| Date Code | 25+ |
| 类型 | N沟道 |
| 耗散功率(Pd) | 175W |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 470 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 1.2kV |
SCT20N120 Overview
碳化硅场效应管(MOSFET) SCT20N120 HiP-247
SCT20N120 Features
No features are available.
SCT20N120 Applications
No applications are available.