RQJ0303PGDQATL-E-VB
Self-operatedAvailable
IC
SOT-23(TO-236)
RQJ0303PGDQATL-E-VB
RQJ0303PGDQATL-E-VB is a VBsemi MOSFETs(MOSFET) in SOT-23(TO-236) package.
Brand
VBsemi
Package
SOT-23(TO-236)
Lead Time
In stock
Date Code
—
RQJ0303PGDQATL-E-VB Parameters
| Package | SOT-23(TO-236) |
|---|---|
| Brand | VBsemi |
| MOQ / SPQ | 1 / 5 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 1.6W |
| 栅极电荷量(Qg) | 24nC@10V |
| 反向传输电容(Crss) | 130pF |
| 类型 | P沟道 |
| Product Name | 1个P沟道 耐压:30V 电流:5.6A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个P沟道 |
| 导通电阻(RDS(on)) | 46mΩ@10V |
| 阈值电压(Vgs(th)) | 2V |
| 输入电容(Ciss) | 1.295nF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 150pF |
| Part Number | RQJ0303PGDQATL-E-VB |
| Unit | pcs |
| Product Weight | 0.000107 |
RQJ0303PGDQATL-E-VB Overview
RQJ0303PGDQATL-E-VB is a VBsemi MOSFETs(MOSFET) in SOT-23(TO-236) package.
RQJ0303PGDQATL-E-VB Features
- 沟槽功率 MOSFET
- 100% 进行栅极电阻 (Rg) 测试
RQJ0303PGDQATL-E-VB Applications
- 用于移动计算
- 负载开关
- 笔记本电脑适配器开关
- DC/DC 转换器