PHT6NQ10T-VB
IC
SOT-223
AvailableNegotiable
PHT6NQ10T-VB
PHT6NQ10T-VB is a VBsemi MOSFETs(MOSFET) in SOT-223 package.
Brand
VBsemi
Package
SOT-223
Stock
25
Lead Time
In stock
PHT6NQ10T-VB Parameters
| Package | SOT-223 |
|---|---|
| Brand | VBsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 100V |
| 耗散功率(Pd) | 1.7W |
| 栅极电荷量(Qg) | 18nC@10V |
| 类型 | N沟道 |
| Part Number | PHT6NQ10T-VB |
| Unit | pcs |
| Product Weight | 0.00029 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 25 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 100mΩ@10V |
| 阈值电压(Vgs(th)) | 3V |
| Operating Temperature | -55℃~+175℃ |
| Product Name | 1个N沟道 耐压:100V |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
PHT6NQ10T-VB Overview
PHT6NQ10T-VB is a VBsemi MOSFETs(MOSFET) in SOT-223 package.
PHT6NQ10T-VB Features
- 根据IEC 61249-2-21定义, 无卤
- 沟槽功率MOSFET
- 最高结温175 °C
- 符合RoHS指令2002/95/EC
PHT6NQ10T-VB Applications
No applications are available.