PDTA123ET, 215
IC
TO-236AB
AvailableNegotiable
PDTA123ET, 215
PDTA123ET, 215 is a nexperia Transistors(BJT) in TO-236AB package.
Brand
nexperia
Package
TO-236AB
Stock
4
Lead Time
In stock
PDTA123ET, 215 Parameters
| Package | TO-236AB |
|---|---|
| Brand | nexperia |
| Date Code | 2502+ |
| 数量 | 1个PNP-预偏置 |
| 集电极电流(Ic) | 100mA |
| 晶体管类型 | PNP |
| 射基极击穿电压(Vebo) | 10V |
| 最大输入电压(VI(off)) | 1.2V |
| 电阻比率 | 1 |
| 集射极饱和电压(VCE(sat)) | 150mV |
| Category | Transistors(BJT) |
|---|---|
| Stock | 4 |
| MOQ / SPQ | 4 / 1 |
| 集射极击穿电压(Vceo) | 50V |
| 耗散功率(Pd) | 250mW |
| 直流电流增益(hFE) | 30 |
| 最小输入电压(VI(on)) | 2V |
| 输入电阻 | 2.2kΩ |
| Operating Temperature | -65℃~+150℃ |
| 集电极截止电流(Icbo) | 100nA |
PDTA123ET, 215 Overview
数字晶体管 250mW 50V 100mA 1个PNP-预偏置
PDTA123ET, 215 Features
No features are available.
PDTA123ET, 215 Applications
No applications are available.