NVMFS6H800NWFT1G
IC
DFN-5(5.9x4.9)
AvailableNegotiable
NVMFS6H800NWFT1G
NVMFS6H800NWFT1G is a onsemi MOSFETs(MOSFET) in DFN-5(5.9x4.9) package.
Brand
onsemi
Package
DFN-5(5.9x4.9)
Stock
20
Lead Time
In stock
NVMFS6H800NWFT1G Parameters
| Package | DFN-5(5.9x4.9) |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 80V |
| 耗散功率(Pd) | 214W |
| 栅极电荷量(Qg) | 53nC@4.5V |
| 反向传输电容(Crss) | 22pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | NVMFS6H800NWFT1G |
| Unit | pcs |
| Product Weight | 0.000185 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 20 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 1.5mΩ@10V |
| 阈值电压(Vgs(th)) | 2V |
| 输入电容(Ciss) | 6.9nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 800pF |
| Product Name | 1个N沟道 耐压:80V 电流:224A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
NVMFS6H800NWFT1G Overview
NVMFS6H800NWFT1G is a onsemi MOSFETs(MOSFET) in DFN-5(5.9x4.9) package.
NVMFS6H800NWFT1G Features
- 小尺寸封装(5x6 mm), 适用于紧凑设计
- 低导通电阻(RDS(on)), 以最小化传导损耗
- 低栅极电荷(QG)和电容, 以最小化驱动损耗
- NVMFS6H800NLWF
- 可焊侧翼选项, 便于光学检测
- 通过 AEC
- Q101 认证, 可提供生产件批准程序(PPAP)文件
- 这些器件为无铅产品, 符合 RoHS 标准
NVMFS6H800NWFT1G Applications
No applications are available.