NVMFS4C03NWFT1G
IC
SO-8-FL-5.8mm
AvailableNegotiable
NVMFS4C03NWFT1G
NVMFS4C03NWFT1G is a onsemi MOSFETs(MOSFET) in SO-8-FL-5.8mm package.
Brand
onsemi
Package
SO-8-FL-5.8mm
Stock
50
Lead Time
In stock
NVMFS4C03NWFT1G Parameters
| Package | SO-8-FL-5.8mm |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 30V |
| 耗散功率(Pd) | 77W |
| 栅极电荷量(Qg) | 20.8nC@4.5V |
| 反向传输电容(Crss) | 67pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | NVMFS4C03NWFT1G |
| Unit | pcs |
| Product Weight | 0.000218 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 1.4mΩ@10V |
| 阈值电压(Vgs(th)) | 2.2V |
| 输入电容(Ciss) | 3.071nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 1.673nF |
| Product Name | 1个N沟道 耐压:30V 电流:159A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
NVMFS4C03NWFT1G Overview
NVMFS4C03NWFT1G is a onsemi MOSFETs(MOSFET) in SO-8-FL-5.8mm package.
NVMFS4C03NWFT1G Features
- 小尺寸封装(5x6mm), 适用于紧凑设计
- 低导通电阻RDS(on), 可最大程度降低传导损耗
- 低栅极电荷QG和电容, 可最大程度降低驱动损耗
- NVMFS4C03NWF
- 可焊侧翼选项, 便于增强光学检测
- 通过AEC-Q101认证, 具备生产件批准程序(PPAP)能力
- 这些器件无铅、无卤素/无溴化阻燃剂(BFR), 符合RoHS标准
NVMFS4C03NWFT1G Applications
No applications are available.