NVMFD5C668NLWFT1G
IC
DFN-8(4.9x5.9)
AvailableNegotiable
NVMFD5C668NLWFT1G
NVMFD5C668NLWFT1G is a onsemi MOSFETs(MOSFET) in DFN-8(4.9x5.9) package.
Brand
onsemi
Package
DFN-8(4.9x5.9)
Stock
50
Lead Time
In stock
NVMFD5C668NLWFT1G Parameters
| Package | DFN-8(4.9x5.9) |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 60V |
| 耗散功率(Pd) | 57.5W |
| 栅极电荷量(Qg) | 9.8nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
| Part Number | NVMFD5C668NLWFT1G |
| Unit | pcs |
| Product Weight | 0.000171 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 5.4mΩ@10V |
| 阈值电压(Vgs(th)) | 2V |
| 输入电容(Ciss) | 1.44nF |
| Product Name | 1个N沟道 耐压:60V 电流:68A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
NVMFD5C668NLWFT1G Overview
NVMFD5C668NLWFT1G is a onsemi MOSFETs(MOSFET) in DFN-8(4.9x5.9) package.
NVMFD5C668NLWFT1G Features
- 小尺寸封装(5x6 mm), 适用于紧凑设计
- 低导通电阻RDS(on), 以最小化传导损耗
- 低栅极电荷QG和电容, 以最小化驱动损耗
- NVMFD5C668NLWF
- 可焊侧翼选项, 便于光学检测
- 通过AEC-Q101认证, 支持生产件批准程序(PPAP)
- 这些器件为无铅产品, 符合RoHS标准
NVMFD5C668NLWFT1G Applications
No applications are available.