NTMYS1D2N04CLTWG
Self-operatedAvailable
IC
DFN-5(5.9x4.9)
NTMYS1D2N04CLTWG
NTMYS1D2N04CLTWG is a onsemi MOSFETs(MOSFET) in DFN-5(5.9x4.9) package.
Brand
onsemi
Package
DFN-5(5.9x4.9)
Lead Time
In stock
Date Code
—
NTMYS1D2N04CLTWG Parameters
| Package | DFN-5(5.9x4.9) |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 40V |
| 耗散功率(Pd) | 134W |
| 栅极电荷量(Qg) | 52nC |
| 反向传输电容(Crss) | 118pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | NTMYS1D2N04CLTWG |
| Unit | pcs |
| Product Weight | 0.000198 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 46 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 0.9mΩ@10V |
| 阈值电压(Vgs(th)) | 1.2V |
| 输入电容(Ciss) | 6.33nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 3nF |
| Product Name | NTMYS1D2N04CLTWG |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
NTMYS1D2N04CLTWG Overview
NTMYS1D2N04CLTWG is a onsemi MOSFETs(MOSFET) in DFN-5(5.9x4.9) package.
NTMYS1D2N04CLTWG Features
- 小尺寸(5x6 mm), 适用于紧凑设计
- 低导通电阻RDS(on), 以最小化传导损耗
- 低栅极电荷QG和电容, 以最小化驱动损耗
- LFPAK4封装, 符合行业标准
- 这些器件为无铅产品, 符合RoHS标准