NCE10TD60BD
IC
TO-263
AvailableNegotiable
NCE10TD60BD
NCE10TD60BD is a NCE IGBTDevices/Modules in TO-263 package.
Brand
NCE
Package
TO-263
Stock
684
Lead Time
In stock
NCE10TD60BD Parameters
| Package | TO-263 |
|---|---|
| Brand | NCE |
| Date Code | 24+ |
| IGBT类型 | FS(场截止) |
| 集射极击穿电压(Vces) | 600V |
| 集射极饱和电压(VCE(sat)) | 1.9V@10A, 15V |
| 栅极电荷量(Qg) | 44nC@15V |
| OutputCapacitors(Coes) | 40pF |
| 开启延迟时间(Td(on)) | 20ns |
| 导通损耗(Eon) | 210uJ |
| 反向恢复时间(Trr) | 158ns |
| Category | IGBTDevices/Modules |
|---|---|
| Stock | 684 |
| MOQ / SPQ | 1 / 1 |
| 耗散功率(Pd) | 83W |
| 集电极电流(Ic) | 20A |
| 栅极阈值电压(Vge(th)) | 4V@1mA |
| 输入电容(Cies) | 1.127nF |
| 反向传输电容(Cres) | 24pF |
| 关断延迟时间(Td(off)) | 73ns |
| 关断损耗(Eoff) | 110uJ |
NCE10TD60BD Overview
使用专有沟槽设计和先进的 FS（场截止）第二代技术， 600V 沟槽 FSII IGBT 具有卓越的导通和开关性能， 且易于并联操作。
NCE10TD60BD Features
No features are available.
NCE10TD60BD Applications
No applications are available.