MJD122G
Self-operatedAvailable
IC
TO-252
MJD122G
MJD122G is a Cmos Darlington Transistors in TO-252 package.
Brand
Cmos
Package
TO-252
Lead Time
In stock
Date Code
26+
MJD122G Parameters
| Package | TO-252 |
|---|---|
| Brand | Cmos |
| Date Code | 26+ |
| 类型 | NPN |
| 集电极电流(Ic) | 8A |
| 集电极截止电流(Icbo) | 10uA |
| 直流电流增益(hFE) | 1000 |
| 射基极击穿电压(Vebo) | 5V |
| 基极-发射极导通电压(VBE(on)) | 2.8V |
| Product Name | NPN 100V 8A |
| Package | TO-252(DPAK) |
| Unit | pcs |
| Product Weight | 0.000438 |
| Category | Darlington Transistors |
|---|---|
| Stock | 2,427 |
| MOQ / SPQ | 1 / 1 |
| 集射极击穿电压(Vceo) | 100V |
| 耗散功率(Pd) | 20W |
| 集射极饱和电压(VCE(sat)) | 4V |
| 特征频率(fT) | 4MHz |
| 基极-发射极饱和电压(VBE(sat)) | 4.5V |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Part Number | MJD122G |
| Packaging | Tube |
| Product Type | Darlington Transistors |
MJD122G Overview
达林顿管 100V 8A NPN TO-252
MJD122G Features
- 低集电极
- 发射极饱和电压
- 集成反并联集电极
- 发射极二极管
MJD122G Applications
- 通用线性和开关应用