MJD122G
IC
TO-252
AvailableNegotiable
MJD122G
MJD122G is a Cmos Darlington Transistors in TO-252 package.
Brand
Cmos
Package
TO-252
Stock
2,478
Lead Time
In stock
MJD122G Parameters
| Package | TO-252 |
|---|---|
| Brand | Cmos |
| Date Code | 26+ |
| 类型 | NPN |
| 集电极电流(Ic) | 8A |
| 集电极截止电流(Icbo) | 10uA |
| 直流电流增益(hFE) | 8000 |
| 基极-发射极饱和电压(VBE(sat)) | 4.5V |
| Category | Darlington Transistors |
|---|---|
| Stock | 2,478 |
| MOQ / SPQ | 1 / 1 |
| 集射极击穿电压(Vceo) | 100V |
| 耗散功率(Pd) | 20W |
| 集射极饱和电压(VCE(sat)) | 4V@8A, 80mA |
| 射基极击穿电压(Vebo) | 5V |
MJD122G Overview
达林顿管 100V 8A NPN TO-252
MJD122G Features
No features are available.
MJD122G Applications
No applications are available.