MJD122
IC
TO-252
AvailableNegotiable
MJD122
Brand
YONGYUTAI
Package
TO-252
Stock
3,200
Lead Time
In stock
MJD122 Parameters
| Package | TO-252 |
|---|---|
| Brand | YONGYUTAI |
| Date Code | 26+ |
| 类型 | NPN |
| 集电极电流(Ic) | 8A |
| 集电极截止电流(Icbo) | 10uA |
| 直流电流增益(hFE) | 12000 |
| 基极-发射极饱和电压(VBE(sat)) | 4.5V |
| Category | Darlington Transistors |
|---|---|
| Stock | 3,200 |
| MOQ / SPQ | 1 / 1 |
| 集射极击穿电压(Vceo) | 100V |
| 耗散功率(Pd) | 1.5W |
| 集射极饱和电压(VCE(sat)) | 4V@8A, 80mA |
| 射基极击穿电压(Vebo) | 5V |
| Operating Temperature | -55℃~+150℃ |
MJD122 Overview
NPN 集电极—发射极电压(Vceo)：100V 集电极电流(Ic)：5A 功率(Pd)：65W 集电极-发射极饱和电压(VCE(sat1)@Ic, Ib)：2V@3A, 12mA 直流电流增益(hFE@Ic, Vce)：1000@0.5A, 3V， 工作温度：+150℃@(Tj)
MJD122 Features
No features are available.
MJD122 Applications
No applications are available.