IPD65R660CFDBTMA1-HXY
IC
TO-252-2L
AvailableNegotiable
IPD65R660CFDBTMA1-HXY
IPD65R660CFDBTMA1-HXY is a HXY MOSFET Silicon CarbideMOSFETs(MOSFET) in TO-252-2L package.
Brand
HXY MOSFET
Package
TO-252-2L
Stock
19
Lead Time
In stock
IPD65R660CFDBTMA1-HXY Parameters
| Package | TO-252-2L |
|---|---|
| Brand | HXY MOSFET |
| MOQ / SPQ | 1 / 1 |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 19 |
IPD65R660CFDBTMA1-HXY Overview
IPD65R660CFDBTMA1-HXY is a HXY MOSFET Silicon CarbideMOSFETs(MOSFET) in TO-252-2L package.
IPD65R660CFDBTMA1-HXY Features
No features are available.
IPD65R660CFDBTMA1-HXY Applications
No applications are available.