IPB042N10N3G
IC
TO-263-3
AvailableNegotiable
IPB042N10N3G
IPB042N10N3G is a Infineon MOSFETs(MOSFET) in TO-263-3 package.
Brand
Infineon
Package
TO-263-3
Stock
12,218
Lead Time
In stock
IPB042N10N3G Parameters
| Package | TO-263-3 |
|---|---|
| Brand | Infineon |
| Date Code | 24+ |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 4.2mΩ@10V |
| 阈值电压(Vgs(th)) | 3.5V |
| 输入电容(Ciss) | 8.41nF |
| Operating Temperature | -55℃~+175℃ |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 12,218 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 100V |
| 耗散功率(Pd) | 214W |
| 栅极电荷量(Qg) | 117nC |
| 反向传输电容(Crss) | 41pF |
IPB042N10N3G Overview
场效应管(MOSFET) 214W 100V 137A 1个N沟道
IPB042N10N3G Features
No features are available.
IPB042N10N3G Applications
No applications are available.