IMBG65R050M2HXTMA1
Self-operatedAvailable
IC
TO-263-7
IMBG65R050M2HXTMA1
IMBG65R050M2HXTMA1 is a Infineon Silicon CarbideMOSFETs(MOSFET) in TO-263-7 package.
Brand
Infineon
Package
TO-263-7
Lead Time
In stock
Date Code
24+
IMBG65R050M2HXTMA1 Parameters
| Package | TO-263-7 |
|---|---|
| Brand | Infineon |
| Date Code | 24+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 650V |
| 阈值电压(Vgs(th)) | 5.6V |
| 输入电容(Ciss) | 790pF |
| Operating Temperature | -55℃~+175℃ |
| 导通电阻(RDS(on)) | 62mΩ |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 10 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 172W |
| 栅极电荷量(Qg) | 22nC |
| 反向传输电容(Crss) | 4.7pF |
| OutputCapacitors(Coss) | 59pF |
IMBG65R050M2HXTMA1 Overview
碳化硅MOSFET 单 N通道 41 A 650 V 0.046 ohm TO-263