IMBG120R116M2HXTMA1
IC
TO-263-7
AvailableNegotiable
IMBG120R116M2HXTMA1
Trans MOSFET N-CH SiC 1.2KV 21.2A T/R
Brand
Infineon
Package
TO-263-7
Stock
1,000
Lead Time
In stock
IMBG120R116M2HXTMA1 Parameters
| Package | TO-263-7 |
|---|---|
| Brand | Infineon |
| Date Code | 26+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.2kV |
| 阈值电压(Vgs(th)) | 5.1V |
| 输入电容(Ciss) | 500pF |
| Operating Temperature | -55℃~+175℃ |
| 导通电阻(RDS(on)) | 115.7mΩ |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 1,000 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 123W |
| 栅极电荷量(Qg) | 14.4nC |
| 反向传输电容(Crss) | 1.6pF |
| OutputCapacitors(Coss) | 19pF |
IMBG120R116M2HXTMA1 Overview
Trans MOSFET N-CH SiC 1.2KV 21.2A T/R
IMBG120R116M2HXTMA1 Features
No features are available.
IMBG120R116M2HXTMA1 Applications
No applications are available.