HYG009N04LS1C2
IC
DFN-8(5.1x5.8)
AvailableNegotiable
HYG009N04LS1C2
HYG009N04LS1C2 is a HUAYI MOSFETs(MOSFET) in DFN-8(5.1x5.8) package.
Brand
HUAYI
Package
DFN-8(5.1x5.8)
Stock
43,591
Lead Time
In stock
HYG009N04LS1C2 Parameters
| Package | DFN-8(5.1x5.8) |
|---|---|
| Brand | HUAYI |
| Date Code | 26+ |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 1.4mΩ@4.5V |
| 阈值电压(Vgs(th)) | 3V |
| 输入电容(Ciss) | 5.876nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 1.278nF |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 43,591 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 40V |
| 耗散功率(Pd) | 75W |
| 栅极电荷量(Qg) | 89nC@10V |
| 反向传输电容(Crss) | 58pF |
| 类型 | N沟道 |
HYG009N04LS1C2 Overview
场效应管(MOSFET) 75W 40V 200A 1个N沟道
HYG009N04LS1C2 Features
No features are available.
HYG009N04LS1C2 Applications
No applications are available.