Stock and price data | Last updated: October 8, 2026, 02:13 (GMT+8)
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HT65N23EVDRZ
IC

PDFN-8L(5x6)

AvailableNegotiable

HT65N23EVDRZ

HT65N23EVDRZ is a HTCSEMI Gallium NitrideTransistors(GaN HEMT) in PDFN-8L(5x6) package.

Brand

HTCSEMI

Package

PDFN-8L(5x6)

Stock

1

Lead Time

In stock

HT65N23EVDRZ Parameters

PackagePDFN-8L(5x6)
BrandHTCSEMI
Date Code25+
类型N沟道
漏源电压(Vdss)650V
阈值电压(Vgs(th))1.2V
输入电容(Ciss)155pF
Operating Temperature-55℃~+150℃
导通电阻(RDS(on))140mΩ
CategoryGallium NitrideTransistors(GaN HEMT)
Stock1
MOQ / SPQ1 / 1
技术路线E-mode
耗散功率(Pd)47W
栅极电荷量(Qg)1.8nC
反向传输电容(Crss)0.31pF
OutputCapacitors(Coss)22pF

HT65N23EVDRZ Overview

增强型650V平台23A的E-MODE氮化镓器件

HT65N23EVDRZ Features

No features are available.

HT65N23EVDRZ Applications

No applications are available.

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