GC4D20120H
IC
TO-247-2
AvailableNegotiable
GC4D20120H
GC4D20120H is a SUPSiC Silicon CarbideDiodes in TO-247-2 package.
Brand
SUPSiC
Package
TO-247-2
Stock
80
Lead Time
In stock
GC4D20120H Parameters
| Package | TO-247-2 |
|---|---|
| Brand | SUPSiC |
| Date Code | 26+ |
| 二极管配置 | 1个独立式 |
| 正向压降(Vf) | 1.5V |
| 反向电流(Ir) | 200uA@1200V |
| 工作结温范围 | -55℃~+175℃ |
| Category | Silicon CarbideDiodes |
|---|---|
| Stock | 80 |
| MOQ / SPQ | 1 / 1 |
| 整流电流 | 54A |
| 直流反向耐压(Vr) | 1.2kV |
| 非重复峰值浪涌电流 (Ifsm) | 130A |
GC4D20120H Overview
总电容电荷（Qc）:52nC
总功率(Ptot):352W
GC4D20120H Features
No features are available.
GC4D20120H Applications
No applications are available.