GC2M0080120D1
IC
TO-247-3
AvailableNegotiable
GC2M0080120D1
GC2M0080120D1 is a SUPSiC Silicon CarbideMOSFETs(MOSFET) in TO-247-3 package.
Brand
SUPSiC
Package
TO-247-3
Stock
310
Lead Time
In stock
GC2M0080120D1 Parameters
| Package | TO-247-3 |
|---|---|
| Brand | SUPSiC |
| Date Code | 25+ |
| 数量 | 1个N沟道 |
| 漏源电压(Vdss) | 1.2kV |
| 阈值电压(Vgs(th)) | 4V |
| 输入电容(Ciss) | 1.13nF |
| Operating Temperature | -55℃~+150℃ |
| 导通电阻(RDS(on)) | 80mΩ |
| Category | Silicon CarbideMOSFETs(MOSFET) |
|---|---|
| Stock | 310 |
| MOQ / SPQ | 1 / 1 |
| 类型 | N沟道 |
| 耗散功率(Pd) | 190W |
| 栅极电荷量(Qg) | 71nC |
| 反向传输电容(Crss) | 7.5pF |
| OutputCapacitors(Coss) | 92pF |
GC2M0080120D1 Overview
碳化硅场效应管
GC2M0080120D1 Features
No features are available.
GC2M0080120D1 Applications
No applications are available.