FQPF10N60C-VB
IC
TO-220F
AvailableNegotiable
FQPF10N60C-VB
FQPF10N60C-VB is a VBsemi MOSFETs(MOSFET) in TO-220F package.
Brand
VBsemi
Package
TO-220F
Stock
50
Lead Time
In stock
FQPF10N60C-VB Parameters
| Package | TO-220F |
|---|---|
| Brand | VBsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 650V |
| 耗散功率(Pd) | 106W |
| 栅极电荷量(Qg) | 43nC@10V |
| 反向传输电容(Crss) | 200pF |
| 类型 | N沟道 |
| Product Name | 1个N沟道 耐压:650V 电流:9.4A |
| Packaging | Tube |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 650mΩ@10V |
| 阈值电压(Vgs(th)) | 5V |
| 输入电容(Ciss) | 1.6nF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 300pF |
| Part Number | FQPF10N60C-VB |
| Unit | pcs |
| Product Weight | 0.002874 |
FQPF10N60C-VB Overview
FQPF10N60C-VB is a VBsemi MOSFETs(MOSFET) in TO-220F package.
FQPF10N60C-VB Features
- 低品质因数 (FOM) Ron × Qg
- 低输入电容 (Ciss)
- 降低开关和传导损耗
- 超低栅极电荷 (Qg)
- 雪崩能量额定 (UIS)
FQPF10N60C-VB Applications
- 服务器和电信电源-开关模式电源 (SMPS)-功率因数校正电源 (PFC)-照明-高强度气体放电灯 (HID)-荧光灯镇流器照明-工业领域