FGY100T120SWD
IC
TO-247-3LD
AvailableNegotiable
FGY100T120SWD
Transistor: IGBT
Brand
ON
Package
TO-247-3LD
Stock
450
Lead Time
In stock
FGY100T120SWD Parameters
| Package | TO-247-3LD |
|---|---|
| Brand | ON |
| Date Code | 25+ |
| IGBT类型 | FS(场截止) |
| 集射极击穿电压(Vces) | 1.2kV |
| 集射极饱和电压(VCE(sat)) | 2V@100A, 15V |
| 栅极电荷量(Qg) | 284nC@15V |
| OutputCapacitors(Coes) | 320pF |
| 开启延迟时间(Td(on)) | 46.4ns |
| 导通损耗(Eon) | 3.1mJ |
| 反向恢复时间(Trr) | 152ns |
| Category | IGBTDevices/Modules |
|---|---|
| Stock | 450 |
| MOQ / SPQ | 1 / 1 |
| 耗散功率(Pd) | 866W |
| 集电极电流(Ic) | 200A |
| 栅极阈值电压(Vge(th)) | 5.6V@100mA |
| 输入电容(Cies) | 8.489nF |
| 反向传输电容(Cres) | 41.4pF |
| 关断延迟时间(Td(off)) | 168ns |
| 关断损耗(Eoff) | 1.6mJ |
FGY100T120SWD Overview
Transistor: IGBT
FGY100T120SWD Features
No features are available.
FGY100T120SWD Applications
No applications are available.