FDMC86570LET60
Self-operatedAvailable
IC
PQFN-8
FDMC86570LET60
FDMC86570LET60 is a onsemi MOSFETs(MOSFET) in PQFN-8 package.
Brand
onsemi
Package
PQFN-8
Lead Time
In stock
Date Code
—
FDMC86570LET60 Parameters
| Package | PQFN-8 |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 60V |
| 耗散功率(Pd) | 65W |
| 栅极电荷量(Qg) | 88nC |
| 反向传输电容(Crss) | 19pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | FDMC86570LET60 |
| Unit | pcs |
| Product Weight | 0.00015 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 4.3mΩ@10V |
| 阈值电压(Vgs(th)) | 3V |
| 输入电容(Ciss) | 4.79nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 821pF |
| Product Name | FDMC86570LET60 |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
FDMC86570LET60 Overview
此N沟道MOSFET采用飞兆带屏蔽栅极技术的先进PowerTrench工艺生产。 该工艺针对导通阻抗优化, 可保持卓越开关性能。
FDMC86570LET60 Features
- T J额定值扩展: 175°C
- 屏蔽栅极MOSFET技术
- 最大r DS(on) = 4.3 mΩ (V GS = 10 V, I D = 18 A)
- 最大r DS(on) = 6.5 mΩ (V GS = 4.5 V, I D = 15 A)
- 高性能沟道技术可实现极低的r DS(on)
- 终端为无铅产品
- 符合RoHS标准
FDMC86570LET60 Applications
- DC-DC转换