FDMC86260ET150
Self-operatedAvailable
IC
PQFN-8
FDMC86260ET150
FDMC86260ET150 is a onsemi MOSFETs(MOSFET) in PQFN-8 package.
Brand
onsemi
Package
PQFN-8
Lead Time
In stock
Date Code
—
FDMC86260ET150 Parameters
| Package | PQFN-8 |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 150V |
| 耗散功率(Pd) | 2.8W |
| 栅极电荷量(Qg) | 15nC |
| 反向传输电容(Crss) | 4.8pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | FDMC86260ET150 |
| Unit | pcs |
| Product Weight | 0.000139 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 34mΩ@10V |
| 阈值电压(Vgs(th)) | 2.7V |
| 输入电容(Ciss) | 1nF |
| Operating Temperature | -55℃~+175℃ |
| OutputCapacitors(Coss) | 105pF |
| Product Name | FDMC86260ET150 |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
FDMC86260ET150 Overview
该N沟道MOSFET采用飞兆先进的PowerTrench®工艺生产, 这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。
FDMC86260ET150 Features
- T J额定值扩展: 175°C
- 最大 rDS(on) = 34 m Ω (VGS = 10 V, ID = 5.4 A )
- 最大 rDS(on) = 44 m Ω (VGS = 6 V, ID = 4.8 A)
- 高性能沟道技术可实现极低的 rDS(on)
- 100%经过UIL测试
- 终端为无铅产品
- 符合RoHS标准
FDMC86260ET150 Applications
- DC-DC转换