FCD5N60TM-WS
Self-operatedAvailable
IC
TO-252
FCD5N60TM-WS
FCD5N60TM-WS is a onsemi MOSFETs(MOSFET) in TO-252 package.
Brand
onsemi
Package
TO-252
Lead Time
In stock
Date Code
—
FCD5N60TM-WS Parameters
| Package | TO-252 |
|---|---|
| Brand | onsemi |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 600V |
| 耗散功率(Pd) | 54W |
| 栅极电荷量(Qg) | 16nC@10V |
| 反向传输电容(Crss) | 22pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±30V |
| Part Number | FCD5N60TM-WS |
| Unit | pcs |
| Product Weight | 0.000504 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 50 |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 810mΩ@10V |
| 阈值电压(Vgs(th)) | 5V |
| 输入电容(Ciss) | 600pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 250pF |
| Product Name | 1个N沟道 耐压:600V 电流:4.6A |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
FCD5N60TM-WS Overview
FCD5N60TM-WS is a onsemi MOSFETs(MOSFET) in TO-252 package.
FCD5N60TM-WS Features
- 在结温(TJ)为150°C时, 耐压650 V
- 典型导通电阻(RDS(on))为810 mΩ
- 超低栅极电荷(典型栅极电荷Qg = 16 nC)
- 低有效输出电容(典型有效输出电容Coss(eff. ) = 32 pF)
- 经过100%雪崩测试
- 符合RoHS标准
FCD5N60TM-WS Applications
- LCD/LED电视和显示器-照明-太阳能逆变器-交流-直流电源