BSC014N04LSIATMA1
IC
TDSON-8FL
AvailableNegotiable
BSC014N04LSIATMA1
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g ) compared to alternative devices has been realized by advanced thin wafer
Brand
Infineon
Package
TDSON-8FL
Stock
13,247
Lead Time
In stock
BSC014N04LSIATMA1 Parameters
| Package | TDSON-8FL |
|---|---|
| Brand | Infineon |
| Date Code | Within 2 years |
| FET 类型 | N 通道 |
| 漏源电压（Vdss） | 40V |
| 驱动电压（最大 Rds On， 最小 Rds On） | 4.5V， 10V |
| 不同 Id 时 Vgs(th)（最大值） | 2V @ 250µA |
| Vgs（最大值） | ±20V |
| 功率耗散（最大值） | 2.5W（Ta）， 96W（Tc） |
| Mounting Type | 表面贴装型 |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 13,247 |
| MOQ / SPQ | 1 / 1 |
| 技术 | MOSFET（金属氧化物） |
| 25°C 时电流 - 连续漏极 (Id) | 31A（Ta）， 100A（Tc） |
| 不同 Id、Vgs 时导通电阻（最大值） | 1.45 毫欧 @ 50A， 10V |
| 不同 Vgs 时栅极电荷 (Qg)（最大值） | 55nC @ 10V |
| 不同 Vds 时输入电容 (Ciss)（最大值） | 4000pF @ 20V |
| Operating Temperature | -55°C ~ 150°C（TJ） |
| 封装/外壳 | 8-PowerTDFN |
BSC014N04LSIATMA1 Overview
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g ) compared to alternative devices has been realized by advanced thin wafer
BSC014N04LSIATMA1 Features
No features are available.
BSC014N04LSIATMA1 Applications
No applications are available.