2N7002K_R1_00501
Self-operatedAvailable
IC
SOT-23
2N7002K_R1_00501
2N7002K_R1_00501 is a PANJIT MOSFETs(MOSFET) in SOT-23 package.
Brand
PANJIT
Package
SOT-23
Lead Time
In stock
Date Code
Within 2 years
2N7002K_R1_00501 Parameters
| Package | SOT-23 |
|---|---|
| Brand | PANJIT |
| Date Code | Within 2 years |
| 数量 | 1个N沟道 |
| 导通电阻(RDS(on)) | 3Ω@10V |
| 阈值电压(Vgs(th)) | 1V |
| 输入电容(Ciss) | 35pF |
| Operating Temperature | -55℃~+150℃ |
| OutputCapacitors(Coss) | 13pF |
| Product Name | N沟道增强型MOSFET-静电保护型 |
| Packaging | Tape & Reel |
| Product Type | MOSFETs(MOSFET) |
| Category | MOSFETs(MOSFET) |
|---|---|
| Stock | 42,375 |
| MOQ / SPQ | 1 / 1 |
| 漏源电压(Vdss) | 60V |
| 耗散功率(Pd) | 500mW |
| 栅极电荷量(Qg) | 800pC@15V |
| 反向传输电容(Crss) | 8pF |
| 类型 | N沟道 |
| 栅极电压(Vgs) | ±20V |
| Part Number | 2N7002K_R1_00501 |
| Unit | pcs |
| Product Weight | 2.8e-05 |
2N7002K_R1_00501 Overview
场效应管(MOSFET) 2N7002K_R1_00501
2N7002K_R1_00501 Features
- 当VGS为10 V、ID为500 mA时, RDS(ON) < 3 Ω
- 当VGS为4.5 V、ID为200 mA时, RDS(ON) < 4 Ω
- 先进的沟槽工艺技术
- 用于超低导通电阻的高密度单元设计
- 关断状态下漏电流极低
- 静电放电(ESD)保护达2 KV HBM
- 符合欧盟RoHS 2.0标准的无铅产品
- 采用符合IEC 61249标准的环保模塑料
2N7002K_R1_00501 Applications
- 负载开关
- PWM应用